TITLE

Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm2/V s for electrons and 0.1 cm2/V s for holes

AUTHOR(S)
Han, Lin; Mandlik, Prashant; Cherenack, Kunigunde H.; Wagner, Sigurd
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/20/2009, Vol. 94 Issue 16, p162105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new gate dielectric material is used to fabricate hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with high field-effect mobilities. The dielectric is a homogeneous SiO2-silicone hybrid, which is deposited by plasma-enhanced chemical vapor deposition system at nominal room temperature. This new dielectric results in a-Si:H TFTs with measured field-effect mobilities of ∼2 cm2/V s for electrons and ∼0.1 cm2/V s for holes.
ACCESSION #
38225298

 

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