Defect reduction in [formula] semipolar GaN grown on m-plane sapphire using ScN interlayers

Johnston, C. F.; Moram, M. A.; Kappers, M. J.; Humphreys, C. J.
April 2009
Applied Physics Letters;4/20/2009, Vol. 94 Issue 16, p161109
Academic Journal
The effect of ScN interlayer thickness on the defect density of [formula] semipolar GaN grown on m-plane sapphire was studied by transmission electron microscopy. The interlayers comprised Sc metal deposited on a GaN seedlayer that was nitrided before GaN overgrowth by metal-organic vapor-phase epitaxy. Both interlayer thicknesses reduced the dislocation density by a factor of 100 to low-108 cm-2. The 8.5 nm interlayer produced regions that were free from basal plane stacking faults (BSF) and dislocations. The overall BSF density here was reduced by a factor of 5, to (6.49±0.07)×104 cm-1, without the need for an ex situ mask patterning step.


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