Crystallographic dependence of loss in domain engineered relaxor-PT single crystals

Zhang, Shujun; Sherlock, Nevin P.; Meyer Jr., Richard J.; Shrout, Thomas R.
April 2009
Applied Physics Letters;4/20/2009, Vol. 94 Issue 16, p162906
Academic Journal
Domain engineered <001> oriented relaxor-PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to “soft” piezoelectric ceramics. However, their characteristic low dielectric loss (≤0.5%) and strain-electric field hysteresis are reflective of “hard” piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the <110> orientation. The high Q, together with high electromechanical coupling (∼0.9) for <110> oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications.


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