TITLE

Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures

AUTHOR(S)
Ishimaru, Manabu; Tanaka, Yuusuke; Hasegawa, Shigehiko; Asahi, Hajime; Sato, Kazuhisa; Konno, Toyohiko J.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/13/2009, Vol. 94 Issue 15, p153103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We prepared TlInGaAsN/TlInP quantum well structures using gas source molecular-beam epitaxy and characterized them by means of transmission electron microscopy and scanning transmission electron microscopy. It was found that naturally formed vertical quantum wells, so-called lateral composition modulation (LCM), with a periodicity of ∼1 nm are formed in TlInGaAsN layers. We discuss their formation process using a simple kinetic Ising model for layer-by-layer growth, and point out that the formation of ultrashort-period LCM is a universal phenomenon in most of epitaxially grown III-V semiconductor alloys.
ACCESSION #
37831858

 

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