Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects

Yang, X. L.; Zhu, W. X.; Wang, C. D.; Fang, H.; Yu, T. J.; Yang, Z. J.; Zhang, G. Y.; Qin, X. B.; Yu, R. S.; Wang, B. Y.
April 2009
Applied Physics Letters;4/13/2009, Vol. 94 Issue 15, p151907
Academic Journal
The vacancy-type defects in (Ga,Mn)N films grown by metal organic chemical vapor deposition were studied by positron annihilation technique. Doppler broadening spectra were measured for the films. Compared to the undoped GaN film, the positron trapping defects in the (Ga,Mn)N films have been changed to a new type defects and its concentration increases with the increasing Mn concentration. By analyzing the S-W correlation plots and our previous results, we identify this type defects in the (Ga,Mn)N as VN-MnGa complex. This type of defects should be considered when understand the magnetic properties in a real (Ga,Mn)N system.


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