Dielectric constant and leakage of BaZrO3 films

İupina, G.; Dąbrowsko, J.; Dudek, P.; Kozıowski, G.; Zaumseil, P.; Lippert, G.; Fursenko, O.; Bauer, J.; Baristiran, C.; Costina, I.; Müssig, H.-J.; Oberbeck, L.; Schröder, U.
April 2009
Applied Physics Letters;4/13/2009, Vol. 94 Issue 15, p152903
Academic Journal
Dielectric properties of thin (<30 nm) BaZrO3 perovskite layers deposited onto TiN were investigated. Polycrystalline films show a dielectric constant of ∼40 and an optical band gap of ∼5.4 eV. Leakage currents of the polycrystalline BaZrO3 films are significantly higher than that of the corresponding amorphous layers. As evidenced by conductive atomic force microscopy, secondary ion mass spectrometry, and ab initio calculations, these currents may be due to hot spots and point defects related to Ti contamination of the dielectrics.


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