TITLE

Thermoelectric properties of stoichiometric and hole-doped CrN

AUTHOR(S)
Quintela, C. X.; Rivadulla, F.; Rivas, J.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/13/2009, Vol. 94 Issue 15, p152103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the thermoelectric figure of merit of chromium nitride, CrN, and its optimization through hole-doping. CrN is a degenerate semiconductor with large thermoelectric power, reaching -185 μV/K at 420 K. The resistivity can be reduced through hole-doping in the series Cr1-xVxN, keeping a large thermopower. The thermal conductivity of CrN is rather low compared to other transition-metal nitrides, reaching its minimum value of 1.0 W/m K at 267 K. The largest ZT=0.04 was measured for Cr0.9V0.1N at room temperature. Our results suggest that CrN could be a good starting point for the design of a thermoelectric material with optimal mechanical properties.
ACCESSION #
37831827

 

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