TITLE

Model of interface states at III-V oxide interfaces

AUTHOR(S)
Robertson, John
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/13/2009, Vol. 94 Issue 15, p152104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a generalized model of the density of interface states at III-V oxide interfaces. The states are based on the native defects such as dangling bonds on the Ga and As sites or As–As bonds created by oxidation. The model explains the difficulty of n-type operation for GaAs field effect transistors (FETs) compared to GaAs pFETs or to InGaAs nFETs.
ACCESSION #
37831826

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics