# Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well

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Details the formation of a quasi-one-dimensional electron gas on an edge surface of an aluminum gallium arsenide/gallium arsenide multiple quantum well structure. Width of the well; Reduction of contamination; Indication of the angular dependence of the magnetoresistance and the magnetic...

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The terahertz response of a high-density and high-mobility two-dimensional electron gas in 13-nm GaAs quantum wells at frequencies of 0.7 and 1.63 THz has been investigated. Terahertz radiation-induced magnetoresistance oscillations have been discovered. The oscillation maxima coincide with the...

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The mobility of a two-dimensional electron gas localized on the surface of liquid helium at low temperatures is found by solving the kinetic equation for the electron distribution function. The result for the mobility contains both the electron-ripplon interaction time and the electron-electron...

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Oscillations of the magnetoresistance commensurate with the spatial modulation period of the growth surfaces were observed in selectively doped GaAs quantum wells with AlAs/GaAs superlattice barriers grown by molecular beam epitaxy. The experimental data obtained are explained by the lateral...

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The carrier transition rates and subband populations for a GaAs/AlGaAs quantum cascade laser operating in the mid-infrared frequency range are calculated by solving the rate equations describing the electron densities in each subband self-consistently. These calculations are repeated for a range...

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In an n-InxGa1-xAs/GaAs double quantum well (xâ‰ˆ0.2) the temperature dependence of the longitudinal resistance Ïxx(T) of a 2D electron gas with low mobility and with an electron density close to the B=0 metalâ€“insulator transition is of an â€œinsulatorâ€ character in the...

- Calculation of the anisotropic mobility in (110) AlAs quantum wells at zero temperature. Khrapai, V. S.; Gold, A. // JETP Letters;Nov2009, Vol. 90 Issue 5, p346
We calculate the mobility of the two-dimensional electron gas as realized in (110) AlAs quantum wells at zero temperature. In this structure the mass is strongly anisotropic which gives rise to an anisotropic mobility. By using a theoretical approach developed by Tokura [Phys. Rev. B 58, 7151...

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Examines the subband structure and uniformity of the electron gas layer in wide parabolic quantum wells. Profiles of capacitance between the front gate and electron gas; Mechanism of increasing in-plane magnetic fields; Correlation between electron density nonuniformities and in-plane magnetic...

- Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6Ã—106 cm2/V s. Lu, T. M.; Tsui, D. C.; Lee, C.-H.; Liu, C. W. // Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p182102
We report the observation of a two-dimensional electron gas (2DEG) in a Si quantum well with mobility 1.6Ã—106 cm2/V s at carrier densities nâ‰¥1.5Ã—1011/cm2. The 2DEG, which resides in an undoped Si/SiGe heterostructure, is capacitively induced using an insulated-gate field-effect...