TITLE

Scaling of the surface migration length in nanoscale patterned growth

AUTHOR(S)
Lee, S. C.; Brueck, S. R. J.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/13/2009, Vol. 94 Issue 15, p153110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Scaling of the surface migration length in nanoscale patterned growth (NPG) is investigated as a function of the lateral dimension LM of a mask film fabricated on a substrate for selective epitaxy. By reducing LM below the surface migration length, any nucleation on the mask is avoided through the evaporation and surface out-diffusion of adatoms. The upper limit of LM for NPG LM,c corresponds to the surface migration length on the mask. An equation, identical to that for two-dimensional step-flow growth, is derived for NPG. However, the boundary conditions at the substrate-mask interface are affected by the surface potential difference and are different from those at the terrace edges of a homogeneous stepped surface. This results in a scaling law for surface migration length, which is proportional to the diffusion constant D and the critical incident flux Fc in the form (D/Fc)1/α with α decreasing from 4 to 2 as evaporation becomes dominant. NPG of GaAs for LM,c∼200 nm(α∼3.8) is demonstrated at ∼600 °C with molecular beam epitaxy.
ACCESSION #
37831813

 

Related Articles

  • Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111). Debnath, R. K.; Meijers, R.; Richter, T.; Stoica, T.; Calarco, R.; Lüth, H. // Applied Physics Letters;3/19/2007, Vol. 90 Issue 12, p123117 

    GaN nanowires have been grown without external catalyst on Si(111) substrates by plasma-assisted molecular beam epitaxy. Nanowire aspect ratios (length/diameter) of about 250 have been achieved. During the initial stage of the growth, there is a nucleation process in which the number of wires...

  • Effects of Be doping on InP nanowire growth mechanisms. Yee, R. J.; Gibson, S. J.; Dubrovskii, V. G.; LaPierre, R. R. // Applied Physics Letters;12/24/2012, Vol. 101 Issue 26, p263106 

    Be-doped InP nanowires were grown by the gold-assisted vapour-liquid-solid mechanism in a gas source molecular beam epitaxy system. The InP nanowire length versus diameter [L(D)] dependence revealed an unexpected transition with increasing Be dopant concentration. At Be dopant concentration...

  • Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy. Tang, H.; Bardwell, J. A.; Webb, J. B.; Moisa, S.; Fraser, J.; Rolfe, S. // Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2764 

    Highly selective growth of GaN on 4H–SiC using the SiC substrate as a pseudomask has been demonstrated using the ammonia molecular-beam-epitaxy technique. A total lack of nucleation on the bare SiC surface was observed under typical GaN growth conditions. The nucleation of the GaN layer...

  • Ambipolar diffusion coefficient in molecular-beam-epitaxy-grown silicon layers. Grivickas, V.; Netiksis, V.; Noreika, D.; Petrauskas, M.; Willander, M.; Hasan, M.-A.; Ni, W.-X. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p617 

    Presents information on a study which characterized the ambipolar diffusion coefficient in molecular-beam epitaxy (MBE)-grown layers. Growth of the MBE layers; Comparison of the measured diffraction change with the probe beam delay; Function of the transient grating method.

  • Ambipolar diffusion in strained Si1-xGex(100) layers grown by molecular beam epitaxy. Grivickas, V.; Netiksis, V.; Noreika, D.; Petrauskas, M.; Willander, M.; Ni, W.-X.; Hasan, M.-A.; Hansson, G. V.; Sundgren, J.-E. // Journal of Applied Physics;8/1/1991, Vol. 70 Issue 3, p1471 

    Presents a study which investigated ambipolar diffusion in strained Si[sub1-x]Ge[subx](100) layers grown by molecular beam epitaxy. Experimental details; Results and discussion; Conclusion.

  • Scaling behavior of the time-fractional equations for molecular-beam epitaxy growth: scaling analysis versus numerical stimulations. H. Xia; G. Tang; K. Han; D. Hao; Z. Xun // European Physical Journal B -- Condensed Matter;Sep2009, Vol. 71 Issue 2, p237 

    The scaling behavior of the time-fractional molecular-beam epitaxy (TFMBE) equations in 1+1 dimensions is investigated by numerical simulations and scaling analysis, respectively. The growth equations studied include the time-fractional linear molecular-beam epitaxy (TFLMBE) and the...

  • Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine. Nikishin, S. A.; Antipov, V. G.; Ruvimov, S. S.; Seryogin, G. A.; Temkin, H. // Applied Physics Letters;11/18/1996, Vol. 69 Issue 21, p3227 

    Growth nucleation and evolution of morphology of GaN on (001) GaAs is investigated as a function of the N2H4/Ga flux ratio. The use of hydrazine allows us to reach high flux ratios without causing any damage to the epitaxial layer. Epitaxial GaN is purely cubic but shows growth anisotropy...

  • Manipulation of nucleation by growth rate modulation. Larsson, Mats I.; Ni, Wei-Xin; Hansson, Göran V. // Journal of Applied Physics;9/15/1995, Vol. 78 Issue 6, p3792 

    Reports a study that manipulated nucleation by means of periodic modulation of the growth rate, both during molecular beam epitaxial growth of silicon on silicon and using a simulated bilayer structure. Method of the study; Results and discussion; Conclusion.

  • High-quality AIN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia. Nikishin, S.A.; Antipov, V.G. // Applied Physics Letters;7/26/1999, Vol. 75 Issue 4, p484 

    Reports on the results of an experiment where hexagonal layers were grown by gas-source molecular beam epitaxy with ammonia. Transition between the silicon surface reconstructions; Effective nucleation layer.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics