TITLE

Atomic scale study of strain relaxation in Sn islands on Sn-induced [formula] surface

AUTHOR(S)
Wang, L. L.; Ma, X. C.; Ning, Y. X.; Ji, S. H.; Fu, Y. S.; Jia, J. F.; Kelly, K. F.; Xue, Q. K.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/13/2009, Vol. 94 Issue 15, p153111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Surface structure of the Sn islands 5 ML high, prepared on [formula] substrate, is investigated by low temperature scanning tunneling microscopy/spectroscopy. Due to the elastic strain relaxation in the islands, the in-plane unit cell structure distorts and the apparent height of the surface atoms varies regularly to form an overall modulated strip structure. The quantum well states are observed to depend on the relative position within this structure, which implies the change of the surface chemical potential induced by the elastic strain relaxation as well.
ACCESSION #
37831812

 

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