TITLE

The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes

AUTHOR(S)
Guo, H. X.; Gao, L. G.; Xia, Y. D.; Jiang, K.; Xu, B.; Liu, Z. G.; Yin, J.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/13/2009, Vol. 94 Issue 15, p153504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Memory cells with sandwich structure based on solid electrolytes Ag30S2P14O42, called ASP, were fabricated on Pt/Ti/Si(001) wafers by using pulsed laser deposition and focused ion beam nanofabrication technique. The current-voltage characteristic of the ASP memory units shows satisfactory switching behaviors. The switching of the devices was explained by the formation and rupture of Ag nanofilaments with the help of bipolar electrical pulses. A simplified model was proposed to describe the growth of the Ag nanofilaments. It was shown that the effective cross section area of the Ag nanofilaments increased at initial stage, then decreased after reaching a maximum until the top and bottom electrodes were connected.
ACCESSION #
37831808

 

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