TITLE

High performance organic thin film transistor with phenyltrimethoxysilane-modified dielectrics

AUTHOR(S)
Guang Cai Yuan; Zheng Xu; Cheng Gong; Qin Jia Cai; Zhi Song Lu; Jing Sheng Shi; Fu Jun Zhang; Su Ling Zhao; Na Xu; Chang Ming Li
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/13/2009, Vol. 94 Issue 15, p153308
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this work, fabrication of organic thin film transistors (OTFTs) using a phenyltrimethoxysilane (PhTMS) modified SiO2 insulator greatly improves the device electrical properties over those with plain or octadecyltrichlorosilane (OTS) modified SiO2, particularly improves the carrier mobility, the subthreshold slope, and channel resistance resulted from reduced density of charge trapping states at the semiconductor/insulator interface. The pentacene OTFTs with modification from PhTMS (3.5‰ v/v) achieves carrier mobility of 1.03 cm2/V s, on/off current ratio of 1.98×105, and subthreshold slope of 0.20 V/decade. This work renders a new, simple approach to significantly improve the OTFT performance.
ACCESSION #
37831807

 

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