TITLE

ZnO tetrapod p-n junction diodes

AUTHOR(S)
Newton, Marcus C.; Shaikhaidarov, Rais
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/13/2009, Vol. 94 Issue 15, p153112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
ZnO nanocrystals hold the potential for use in a wide range of applications particularly in optoelectronics. We report on the fabrication of a highly sensitive p-n junction diode structure based on a single ZnO tetrapod shaped nanocrystal. This device shows a noted response to ultraviolet light with high internal gain. The high reponsivities we have observed exceed 104 A/W and are likely due to impact-ionization effects at the p-n junction interface.
ACCESSION #
37831804

 

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