Dissipation-factor-based criterion for the validity of carrier-type identification by capacitance-voltage measurements

Bierwagen, O.; Nagata, T.; Ive, T.; Van de Walle, C. G.; Speck, J. S.
April 2009
Applied Physics Letters;4/13/2009, Vol. 94 Issue 15, p152110
Academic Journal
High series resistance and parasitic parallel conductance—typical problems in electronic materials at early stages of development—can lead to serious artifacts in capacitance-voltage measurements. Depending on the assumed equivalent circuit model, these artifacts can even lead to an incorrect carrier type identification. Based on an analytical model we show that a dissipation factor of less than unity indicates that the correct carrier type is obtained in the series circuit model. In the context of Schottky diodes, we also show how the characteristics of the measured conductance-voltage curves from the parallel circuit model can be used to infer the carrier type. We demonstrate these effects with the example of an n-type ZnO sample for which the measured capacitance-voltage dependence seemingly shows the presence of p-type conductivity.


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