TITLE

The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces

AUTHOR(S)
Lin, H. C.; Brammertz, Guy; Martens, Koen; de Valicourt, Guilhem; Negre, Laurent; Wang, Wei-E; Tsai, Wilman; Meuris, Marc; Heyns, Marc
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/13/2009, Vol. 94 Issue 15, p153508
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An interface characterization technique, termed the Fermi-level efficiency (FLE) method, is proposed for evaluating the passivation level of high trap density oxide-semiconductor interfaces. Based on the characteristic charge trapping time-energy relation and the conductance method, the FLE method examines the Fermi-level displacement at the oxide-semiconductor interface under applied gate bias. The obtained Fermi-level efficiencies can be used to assess the interface qualities of metal-oxide-semiconductor devices with III-V and other novel substrate materials.
ACCESSION #
37831785

 

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