Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

Katsia, E.; Huby, N.; Tallarida, G.; Kutrzeba-Kotowska, B.; Perego, M.; Ferrari, S.; Krebs, F. C.; Guziewicz, E.; Godlewski, M.; Osinniy, V.; Luka, G.
April 2009
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p143501
Academic Journal
Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2. Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram.


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