Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field

Niida, Y.; Takashina, K.; Fujiwara, A.; Fujisawa, T.; Hirayama, Y.
April 2009
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p142101
Academic Journal
We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO2/Si(100)/SiO2 quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g-factor and effective mass g*m* to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias.


Related Articles

  • Graded InGaAs/GaAs strained-layer single quantum well laser. Tae-Kyung Yoo; Spencer, Robert; Schaff, William J.; Eastman, Lester F.; Ki-Woong Chung; Doyeol Ahn // Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2239 

    Presents a graded indium gallium arsenide/gallium arsenide strained single quantum well laser. Calculation of the bias-dependencies of valence subbands; Determination of the electron distributions in the conduction bands; Reduction of the electron-hole spatial separation.

  • Electron density in quantum well diodes. Jogai, B.; Huang, C. I.; Bozada, C. A. // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p3126 

    Presents a self-consistent calculation of the electron density and conduction-band edge. States that are capable of trapping a substantial amount of charge; Schemes used for the quantitative prediction of the terminal current-voltage characteristic of quantum well diodes; Capability of a...

  • System of quantum wells in a parallel magnetic field. Belyavskiı, V. I.; Shevtsov, S. V.; Kopaev, Yu. V. // Physics of the Solid State;Sep98, Vol. 40 Issue 9, p1563 

    The energy spectrum and quantum states of electrons in a system of quantum wells in a strong magnetic field parallel to the heterogeneous boundaries are studied. The combined effect of the quantizing magnetic field and the potential of the system of quantum wells leads to a radical change in the...

  • Effects of electric and magnetic fields on confined donor states in a coupled double quantum well. Cen, J.; Lee, S. M.; Bajaj, K. K. // Journal of Applied Physics;3/15/1993, Vol. 73 Issue 6, p2848 

    Presents a study that developed a variational formalism to calculate the effects of electric and magnetic fields on confined hydrogenic donor states in asymmetric coupled double quantum well (ACDQW) structures. Background on coupled double quantum wells; Schematic conduction band diagram for an...

  • Binding Energies of Donor States in GaAs-GaAlAs Quantum Wells Under Hydrostatic Pressure. Panahi, H.; Maleki, M. // Journal of Applied Sciences;2008, Vol. 8 Issue 4, p636 

    The binding energies of donor states (1s, 2s, 2px, 3px) in GaAs-Ga0.7Al0.3As quantum wells are investigated with a variational method under hydrostatic pressure. In the calculation, we take into account the electronic effective mass, dielectric constant and conduction band offset between the...

  • Intervalley splittings of Si quantum wells. Park, S.-H.; Lee, Y. Y.; Ahn, Doyeol // Journal of Applied Physics;Aug2008, Vol. 104 Issue 3, p033703 

    Intervalley splittings of Si quantum wells are studied using a multivalley effective mass theory and a finite element method. It is found that the contributions to the valley splitting mainly come from the quantum well interfaces and the external field. Especially the derivatives of the...

  • Magnetic Field Modulated Photoreflectance Study of the Electron Effective Mass in Dilute Nitride Semiconductors. Mori, N.; Hiejima, K.; Kubo, H.; Patanè, A.; Eaves, L. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p23 

    Magnetic field modulated photoreflectance measurements are performed on the dilute nitride semiconductor Ga(AsN) in quantizing magnetic fields. From the measured cyclotron energies, the conduction band effective mass and its dependence on the nitrogen content are determined. The effective mass...

  • The de Haas-van Alphen effect in nanostructures of cadmium fluoride. Bagraev, N.; Brilinskaya, E.; Danilovskii, E.; Klyachkin, L.; Malyarenko, A.; Romanov, V. // Semiconductors;Jan2012, Vol. 46 Issue 1, p87 

    Measurements of the field and temperature dependences of static magnetic susceptibility demonstrate de Haas-van Alphen oscillations at high temperatures and low magnetic fields in sandwich nanostructures, which are represented by an ultranarrow p-type CdF quantum well confined by δ barriers...

  • Ground and excited state transitions in as-grown Ga0.64In0.36N0.046As0.954 quantum wells studied by contactless electroreflectance. Kudrawiec, Robert; Gladysiewicz, Marta; Misiewicz, Jan; Ishikawa, Fumitaro; Ploog, Klaus H. // Applied Physics Letters;1/22/2007, Vol. 90 Issue 4, p041916 

    The optical transitions of as-grown Ga0.64In0.36N0.046As0.954 multiple quantum wells grown at the low temperature of 375 °C were studied by contactless electroreflectance (CER). The investigation was carried out at room temperature for a set of samples having quantum well (QW) widths ranging...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics