Size-dependent impurity activation energy in GaN nanowires

Yoon, J.; Girgis, A. M.; Shalish, I.; Ram-Mohan, L. R.; Narayanamurti, V.
April 2009
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p142102
Academic Journal
The effect of the surrounding dielectric on the conductivity of GaN nanowires is measured experimentally. The two following configurations are considered: bare suspended and SiO2-coated nanowires. The measured conductivity is consistently fitted by two exponential terms with different activation energies, indicating multichannel conduction. The larger energy, attributed to activation of impurities into the conduction subband, shows essentially inverse dependence on nanowire radius, consistent with the dielectric confinement effect. This agrees with calculated values from finite element analysis. The smaller energy is independent of the nanowire radius, suggesting a surface conduction channel.


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