Field dependent and high light sensitive organic phototransistors based on linear asymmetric organic semiconductor

Guo, Yunlong; Du, Chunyan; Di, Chong-an; Zheng, Jian; Sun, Xiangnan; Wen, Yugeng; Zhang, Lei; Wu, Weiping; Yu, Gui; Liu, Yunqi
April 2009
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p143303
Academic Journal
The authors reported organic phototransistors (PTs) with octadecyltrichlorosilane treated SiO2/Si substrate based on anthra[2,3-b]benzo[d]thiophene. The organic PTs show a high mobility of 0.4 cm2 V-1 s-1, a maximum photoresponsivity of about 1000 A/W, and photocurrent/dark-current ratio of around 800 under white light irradiation with 30 μW/cm2. The data are comparable with those of PTs based on amorphous silicon. Meanwhile, it is interesting to see that the devices show a high air-stable property and high photosensitivity via electric-field enhanced process. All these phenomena were attributed to the intrinsic optic-electronic property of the organic semiconductor and optic-electric field effect.


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