TITLE

Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth

AUTHOR(S)
Polyakov, A. Y.; Govorkov, A. V.; Smirnov, N. B.; Markov, A. V.; Lee, In-Hwan; Ju, Jin-Woo; Pearton, S. J.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p142103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Microcathodoluminescence (MCL) spectra and monochromatic MCL images were measured for GaN/InGaN multiquantum well (MQW) structures prepared by epitaxial lateral overgrowth (ELOG). The MQW related peak is redshifted from 462 nm in the normally grown ELOG window region to 482 nm in the laterally overgrown ELOG wing region. Correspondingly, the former appears as dark contrast stripes for long wavelength MCL images and as bright stripes for the short wavelength MCL images. The redshift is consistent with a higher indium incorporation efficiency for growth in the [formula] direction compared to the [0001] direction.
ACCESSION #
37580355

 

Related Articles

  • InGaN/GaN single-quantum-well microdisks. Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Chou, Mitch M. C. // Applied Physics Letters;6/11/2012, Vol. 100 Issue 24, p242101 

    We have grown InxGa1-xN/GaN quantum wells atop GaN microdisk with γ-LiAlO2 substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and...

  • Optical characteristics of a-plane InGaN/GaN multiple quantum wells with different well widths. Ko, T. S.; Lu, T. C.; Wang, T. C.; Lo, M. H.; Chen, J. R.; Gao, R. C.; Kuo, H. C.; Wang, S. C.; Shen, J. L. // Applied Physics Letters;4/30/2007, Vol. 90 Issue 18, p181122 

    a-plane InGaN/GaN multiple quantum wells of different widths ranging from 3 to 12 nm were grown on r-plane sapphire by metal organic chemical vapor deposition for investigation. The peak emission intensity of the photoluminescence (PL) reveals a decreasing trend as the well width increases from...

  • Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy. Qian, L.Q.; Wessels, B.W. // Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p628 

    Analyzes the use of metalorganic vapor phase epitaxy for indium (In) and gallium antimonide (GaSb) quantum well structures. Accounts of several source materials employed in the atmospheric pressure metal-organic vapor phase epitaxy; Impact of crystal growth on In and GaSb lattices; Effects of...

  • Localization versus carrier-screening effects in InGaN quantum wells — A time-resolved cathodoluminescence study. Bell, A.; Christen, J.; Bertram, F.; Stevens, M.; Ponce, F. A.; Marui, H.; Tanaka, S. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p301 

    Time-resolved cathodoluminescence (CL) has been used to separate the effects of internal fields and localization at indium fluctuations in InGaN quantum wells. Spatially-time-resolved CL measurements were recorded at regions of high and low indium content. Faster decay is observed in the local...

  • Tapered GaAs quantum wells and selectively contactable two-dimensional electron gases grown by shadow masked molecular-beam epitaxy. Lorke, Axel; English, John H.; Gossard, Arthur C.; Petroff, Pierre M. // Journal of Applied Physics;4/1/1995, Vol. 77 Issue 7, p3578 

    Discusses the use of shadow masks for the growth of gallium arsenic (GaAs) quantum wells. Use of molecular beam epitaxy; Growth sequence of GaAs; Cathodoluminescence of the edge region.

  • InGaAs/InP graded-index quantum well lasers with nearly ideal static characteristics. Temkin, H.; Tanbun-Ek, T.; Logan, R. A.; Lewis, J. A.; Dutta, N. K. // Applied Physics Letters;3/26/1990, Vol. 56 Issue 13, p1222 

    We have examined static properties of step and continuously graded single and multiple quantum well InGaAs/InP lasers grown by atmospheric pressure metalorganic vapor phase epitaxy. Systematic changes in the band gap of InGaAsP waveguide layers have resulted in lasers with low threshold current...

  • Segregation of Indium in InGaAs/GaAs Quantum Wells Grown by Vapor-Phase Epitaxy. Drozdov, Yu. N.; Baidus�, N. V.; Zvonkov, B. N.; Drozdov, M. N.; Khrykin, O. I.; Shashkin, V. I. // Semiconductors;Feb2003, Vol. 37 Issue 2, p194 

    Distribution of indium atoms in structures which contained double InGaAs/GaAs quantum wells and were grown by vapor-phase epitaxy from metal-organic compounds was studied. Experimental indiumconcentration profiles were obtained using Auger electron spectroscopy. A model of growth with allowance...

  • Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures. Grunthaner, F. J.; Yen, M. Y.; Fernandez, R.; Lee, T. C.; Madhukar, A.; Lewis, B. F. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p983 

    We report successful molecular beam epitaxial growth of thin multiple quantum well structures of GaAs/InAs(100) involving 7.4% lattice mismatch. Cross-sectional transmission electron microscopy studies reveal well formed interfaces and low defect density.

  • Electronic properties of In0.53Ga0.47As-InP single quantum wells grown by chemical beam epitaxy. Frei, Michel; Tsui, D. C.; Tsang, W. T. // Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p606 

    In0.53Ga0.47As-InP single quantum well (SQW) structures grown by chemical beam epitaxy (CBE) were studied using low-field magnetotransport, the quantum Hall effect, and far-infrared cyclotron resonance measurements at 4.2 K. We compare results on the two-dimensional electron gas (2DEG) in the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics