TITLE

Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth

AUTHOR(S)
Polyakov, A. Y.; Govorkov, A. V.; Smirnov, N. B.; Markov, A. V.; Lee, In-Hwan; Ju, Jin-Woo; Pearton, S. J.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p142103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Microcathodoluminescence (MCL) spectra and monochromatic MCL images were measured for GaN/InGaN multiquantum well (MQW) structures prepared by epitaxial lateral overgrowth (ELOG). The MQW related peak is redshifted from 462 nm in the normally grown ELOG window region to 482 nm in the laterally overgrown ELOG wing region. Correspondingly, the former appears as dark contrast stripes for long wavelength MCL images and as bright stripes for the short wavelength MCL images. The redshift is consistent with a higher indium incorporation efficiency for growth in the [formula] direction compared to the [0001] direction.
ACCESSION #
37580355

 

Related Articles

  • Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm. Okamoto, Kuniyoshi; Kashiwagi, Junich; Tanaka, Taketoshi; Kubota, Masashi // Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG 

    We demonstrated nonpolar m-plane InGaN multiple quantum well laser diodes (LDs) under continuous-wave (cw) operation with a lasing wavelength of 499.8 nm, which is the longest reported for GaN-based LDs. A maximum optical output power of 15 mW was achieved, with the threshold current and the...

  • Localization versus carrier-screening effects in InGaN quantum wells — A time-resolved cathodoluminescence study. Bell, A.; Christen, J.; Bertram, F.; Stevens, M.; Ponce, F. A.; Marui, H.; Tanaka, S. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p301 

    Time-resolved cathodoluminescence (CL) has been used to separate the effects of internal fields and localization at indium fluctuations in InGaN quantum wells. Spatially-time-resolved CL measurements were recorded at regions of high and low indium content. Faster decay is observed in the local...

  • Tapered GaAs quantum wells and selectively contactable two-dimensional electron gases grown by shadow masked molecular-beam epitaxy. Lorke, Axel; English, John H.; Gossard, Arthur C.; Petroff, Pierre M. // Journal of Applied Physics;4/1/1995, Vol. 77 Issue 7, p3578 

    Discusses the use of shadow masks for the growth of gallium arsenic (GaAs) quantum wells. Use of molecular beam epitaxy; Growth sequence of GaAs; Cathodoluminescence of the edge region.

  • Effects of thermal annealing on the band gap of GaInAsSb. Dier, Oliver; Dachs, Susanne; Grau, Markus; Chun Lin; Lauer, Christian; Amann, Markus-Christian // Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p151120 

    In this Letter, the thermal stability of GaInAsSb grown by molecular-beam epitaxy was investigated. We found a strong blueshift for both bulk material and multiple-quantum-well (MQW) structures caused by thermal annealing. The shift is almost independent of design parameters such as indium...

  • Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth. Polyakov, A. Y.; Govorkov, A. V.; Smirnov, N. B.; Markov, A. V.; Lee, In-Hwan; Ju, Jin-Woo; Karpov, S. Yu.; Shmidt, N. M.; Pearton, S. J. // Journal of Applied Physics;Jun2009, Vol. 105 Issue 12, p123708 

    High resolution x-ray diffraction, electron beam induced current, capacitance-voltage profiling, admittance spectroscopy, deep level transient spectroscopy (DLTS), microcathodoluminescence (MCL) spectra and imaging were performed for multi-quantum-well (MQW) GaN/InGaN p-n junctions grown on...

  • Characterizing nanometer-sized V-defects in InGaN single quantum well films by high-spatial-resolution cathodoluminescence spectroscopy. Yoshikawa, M.; Murakami, M.; Ishida, H.; Harima, H. // Applied Physics Letters;3/30/2009, Vol. 94 Issue 13, p131908 

    We studied cathodoluminescence (CL) spectral variations in the vicinity of the V-defects in InGaN single quantum well (SQW) films by using our newly developed SE-SEM-CL. The peak intensity and peak wavelength of the CL peaks around 448 and 400 nm were found to change significantly near the apex...

  • InGaN/GaN single-quantum-well microdisks. Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Chou, Mitch M. C. // Applied Physics Letters;6/11/2012, Vol. 100 Issue 24, p242101 

    We have grown InxGa1-xN/GaN quantum wells atop GaN microdisk with γ-LiAlO2 substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and...

  • Peculiarities of catastrophic optical damage in single quantum well InGaAsP/InGaP buried-heterostructure lasers. Yoo, Jae S.; Lee, Sang H.; Park, Gueorgui T.; Ko, Yong T.; Kim, Taeil // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1840 

    Presents a study which investigated the catastrophic optical damage in single quantum well indium gallium arsenic phosphide/indium gallium phosphide buried-heterostructure lasers. Sample preparation; Information on the causes of laser diode failures; Conclusions.

  • Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells. Liuolia, Vytautas; Marcinkevičius, Saulius; Lin, You-Da; Ohta, Hiroaki; DenBaars, Steven P.; Nakamura, Shuji // Journal of Applied Physics;Aug2010, Vol. 108 Issue 2, p023101 

    Spectrally-, polarization-, and time-resolved photoluminescence (PL) experiments have been performed on 2.5 nm thick m-plane single InGaN quantum wells. It has been found that PL decay is mainly determined by nonradiative recombination through several types of recombination centers, while PL...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics