Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth

Polyakov, A. Y.; Govorkov, A. V.; Smirnov, N. B.; Markov, A. V.; Lee, In-Hwan; Ju, Jin-Woo; Pearton, S. J.
April 2009
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p142103
Academic Journal
Microcathodoluminescence (MCL) spectra and monochromatic MCL images were measured for GaN/InGaN multiquantum well (MQW) structures prepared by epitaxial lateral overgrowth (ELOG). The MQW related peak is redshifted from 462 nm in the normally grown ELOG window region to 482 nm in the laterally overgrown ELOG wing region. Correspondingly, the former appears as dark contrast stripes for long wavelength MCL images and as bright stripes for the short wavelength MCL images. The redshift is consistent with a higher indium incorporation efficiency for growth in the [formula] direction compared to the [0001] direction.


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