Impact of oxide defects on band offset at GeO2/Ge interface

Yang, M.; Wu, R. Q.; Chen, Q.; Deng, W. S.; Feng, Y. P.; Chai, J. W.; Pan, J. S.; Wang, S. J.
April 2009
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p142903
Academic Journal
High quality GeO2 dielectrics were prepared on Ge(001) surface by direct atomic source oxidation. The band alignments have been studied by using high resolution x-ray photoemission spectroscopy. The valence and conduction band offsets at GeO2/Ge(001) interface are 4.59±0.03 and 0.54±0.03 eV, respectively. The calculated projected density of states indicate that the formation of germanium and oxygen vacancies at different oxidation stages might result in the reduction of valence band offsets, which clarified the varied experimental results of valence band offset [M. Perego et al., Appl. Phys. Lett. 90, 162115 (2007) and V. V. Afanas’ev and A. Stesmans, Appl. Phys. Lett. 84, 2319 (2004)].


Related Articles

  • Pt-assisted oxidation of (100)-Ge/high-k interfaces and improvement of their electrical quality. Henkel, Christoph; Bethge, Ole; Abermann, Stephan; Puchner, Stefan; Hutter, Herbert; Bertagnolli, Emmerich // Applied Physics Letters;10/11/2010, Vol. 97 Issue 15, p152904 

    We report on the improvement of electrical quality of (100)-Ge/high-k-dielectric interfaces by introducing thin Pt top layers on the dielectric and subsequent oxidative treatments or using a Pt-deposition process with inherent oxidative components. Here, deposition of thin physical vapor...

  • Surface Passivation of Germanium Using NH3 Ambient in RTP for High Mobility MOS Structure. Khairnar, Anil G.; Mhaisagar, Y. S.; Mahajan, A. M. // Journal of Nano- & Electronic Physics;2013, Vol. 5 Issue 2, p02009-1 

    Ge CMOS is very striking for the post Si-CMOS technology. However, we have to attempt a number of challenges with regard to materials and their interface control. In this paper we have investigated the control of the interfacial properties of SiO2 / Ge gate stack structures by the thermal...

  • Threshold-voltage modulated phase change heterojunction for application of high density memory. Baihan Yan; Hao Tong; Hang Qian; Xiangshui Miao // Applied Physics Letters;9/28/2015, Vol. 107 Issue 13, p1 

    Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any...

  • Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer. Qi Xie; Deduytsche, Davy; Schaekers, Marc; Caymax, Matty; Delabie, Annelies; Xin-Ping Qu; Detavernier, Christophe // Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p112905 

    The electrical properties of plasma-enhanced atomic-layer-deposited (PE-ALD) TiO2 as gate dielectric were investigated for germanium-channel complementary metal-oxide-semiconductor capacitors by using ultrathin in situ HfO2/GeO2 interlayers. TiO2 grown by PE-ALD exhibited a k value of 50±5....

  • Evidence of a thermally stimulated charge transfer mechanism and interface defect formation in metal-oxide-semiconductor structures with germanium nanocrystals. Beyer, Reinhard; von Borany, Johannes // Journal of Applied Physics;Mar2009, Vol. 105 Issue 6, p064513 

    The trapping of charge carriers and the mechanism of the charge transfer were examined in metal-oxide-semiconductor structures with germanium nanocrystals embedded in a 20 nm silicondioxide layer. The nanoclusters were generated by ion beam synthesis. Capacitance-voltage (C-V) measurements...

  • Diffusion of tin in germanium: A GGA+U approach. Tahini, H.; Chroneos, A.; Grimes, R. W.; Schwingenschlögl, U. // Applied Physics Letters;10/17/2011, Vol. 99 Issue 16, p162103 

    Density functional theory calculations are used to investigate the formation and diffusion of tin-vacancy pairs (SnV) in germanium (Ge). Depending upon the Fermi energy, SnV pairs can form in neutral, singly negative, or doubly negative charged states. The activation energies of diffusion, also...

  • Optimum strain configurations for carrier injection in near infrared Ge lasers. Aldaghri, O.; Ikonic, Z.; Kelsall, R. W. // Journal of Applied Physics;Mar2012, Vol. 111 Issue 5, p053106 

    The behavior of direct and indirect valleys in Ge, and the bandgap shrinking, under different tensile-strain conditions in bulk Ge and Ge quantum well structures are explored using the deformation potential and k·p methods. The doping density required for filling the indirect valleys up to...

  • Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts. Kasahara, K.; Baba, Y.; Yamane, K.; Ando, Y.; Yamada, S.; Hoshi, Y.; Sawano, K.; Miyao, M.; Hamaya, K. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p07C503 

    Using high-quality Fe3Si/n+-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an n-type germanium (n-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased...

  • Three-Dimensional Silicon-Germanium Nanostructuresfor CMOS Compatible Light Emitters and Optical Interconnects. Tsybeskov, L.; Lee, E.-K.; Chang, H.-Y.; Kamenev, B. V.; Lockwood, D. J.; Baribeau, J.-M.; Kamins, T. I. // Advances in Optical Technologies;2008 Special Issue 1, p1 

    Three-dimensional SiGe nanostructures grown on Si (SiGe/Si) using molecular beam epitaxy or low-pressure chemical vapor deposition exhibit photoluminescence and electroluminescence in the important spectral range of 1.3-1.6 μm. At a high level of photoexcitation or carrier injection, thermal...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics