Improvement of subthreshold current transport by contact interface modification in p-type organic field-effect transistors

Kano, Masataka; Minari, Takeo; Tsukagoshi, Kazuhito
April 2009
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p143304
Academic Journal
The charge injection efficiency of organic field-effect transistors (OFETs) is found to be a critical factor determining the subthreshold characteristics of these devices. OFETs fabricated using a wide band gap organic semiconductor and gold source/drain contacts display large threshold voltage and poor subthreshold characteristics. Insertion of a metal-oxide charge injection layer at the contact/semiconductor interface lower the injection barrier height, resulting in marked improvements in threshold voltage and subthreshold slope and strong suppression of the short-channel effect. The improved subthreshold characteristics are attributed to enhanced charge injection and the consequent promotion of charge accumulation.


Related Articles

  • Einstein relation in hopping transport of organic semiconductors. Li, Ling; Meller, Gregor; Kosina, Hans // Journal of Applied Physics;Jul2009, Vol. 106 Issue 1, p13714 

    The ratio between mobility and diffusion parameters (Einstein relation) in organic semiconductors has been a debating issue in the recent years. In this paper we developed an analytical model based on hopping transport theory and the Gaussian density of states. The validity of Einstein relation...

  • ZrO2 dielectric-based low-voltage organic thin-film inverters. Oh, Jeong-Do; Seo, Hoon-Seok; Shin, Eun-Sol; Kim, Dae-Kyu; Ha, Young-Geun; Choi, Jong-Ho // Applied Physics Letters;8/5/2013, Vol. 103 Issue 6, p063304 

    In this paper, the authors first report ZrO2-dielectric based low-voltage organic thin-film complementary metal-oxide semiconductor inverters. Two active layers of p-type pentacene and n-type N,N′-dioctyl-3,4,9,10-perylenedicarboximide were successively deposited on the thermally stable,...

  • High-performance solution-processed triisopropylsilylethynyl pentacene transistors and inverters fabricated by using the selective self-organization technique. Se Hyun Kim; Danbi Choi; Dae Sung Chung; Chanwoo Yang; Jaeyoung Jang; Chan Eon Park; Sang-Hee Ko Park // Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p113306 

    To obtain selectively self-organized active layers of organic field-effect transistors (OFETs) and inverters from a solution-phased triisopropylsilylethynyl pentacene (TIPS-PEN) semiconductor, we locally patterned an oxide dielectric, covered with a hydrophobic fluoropolymer, using O2 plasma...

  • Effects of amorphous semiconductor thickness on top gate staggered organic field-effect transistors. Verilhac, J. M.; Benwadih, M.; Altazin, S.; Jacob, S.; Gwoziecki, R.; Coppard, R.; Serbutoviez, C. // Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p143301 

    We have investigated the influence of the semiconductor thickness varying by almost two orders of magnitude on the transfer and output characteristics of top gate staggered organic field-effect transistors. We observe that the mobility in the saturation regime is almost constant in the thickness...

  • Single-step solution processing of small-molecule organic semiconductor field-effect transistors at high yield. Yu, Liyang; Li, Xiaoran; Pavlica, Egon; Loth, Marsha A.; Anthony, John E.; Bratina, Gvido; Kjellander, Charlotte; Gelinck, Gerwin; Stingelin, Natalie // Applied Physics Letters;12/26/2011, Vol. 99 Issue 26, p263304 

    Here, we report a simple, alternative route towards high-mobility structures of the small-molecular semiconductor 5,11-bis(triethyl silylethynyl) anthradithiophene that requires one single processing step without the need for any post-deposition processing. The method relies on careful control...

  • The Electronic Structure of Oxygen Vacancy in Amorphous HfSiO4. Noh, Hyeon-Kyun; Ryu, Byungki; Bang, Junhyeok; Chang, Kee Joo; Choi, Eun-Ae // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p57 

    We perform first-principles density functional calculations to investigate the electronic structure of O-vacancy in amorphous HfSiO4. We find that O-vacancies surrounded only by Si atoms are energetically most favorable and exhibit the defect levels similar to those of α-quartz SiO2. When...

  • Erratum: "Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method" [Appl. Phys. Lett. 104, 013301 (2014)]. Chuan Liu; Yong Xu; Ghibaudo, Gerard; Xubing Lu; Takeo Minari; Yong-Young Noh // Applied Physics Letters;2/17/2014, Vol. 104 Issue 7, p079902-1 

    A correction to the article "Evaluating Injection and Transport Properties of Organic Field-Effect Transistors by the Convergence Point in Transfer-Length Method," that was published in the January 2, 2014 issue is presented.

  • Recombination via radiation-induced defects in field-effect transistor. Le Bras, Luc; Bendada, Matti; Mialhe, Pierre; Blampain, Eloi; Charles, Jean-Pierre // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p5676 

    Focuses on a study which analyzed charge transport phenomena in metal-oxide semiconductor field-effect transistor structures. Method; Results and discussion; Conclusion.

  • Solution-processible high-permittivity nanocomposite gate insulators for organic field-effect transistors. Kim, P.; Zhang, X.-H.; Domercq, B.; Jones, S. C.; Hotchkiss, P. J.; Marder, S. R.; Kippelen, B.; Perry, J. W. // Applied Physics Letters;7/7/2008, Vol. 93 Issue 1, p013302 

    We report on solution-processible high permittivity nanocomposite gate insulators based on BaTiO3 nanoparticles, surface-modified with a phosphonic acid, in poly(4-vinylphenol) for organic field-effect transistors. The use of surface-modified BaTiO3 nanoparticles affords high quality...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics