TITLE

Effects of amorphous semiconductor thickness on top gate staggered organic field-effect transistors

AUTHOR(S)
Verilhac, J. M.; Benwadih, M.; Altazin, S.; Jacob, S.; Gwoziecki, R.; Coppard, R.; Serbutoviez, C.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p143301
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the influence of the semiconductor thickness varying by almost two orders of magnitude on the transfer and output characteristics of top gate staggered organic field-effect transistors. We observe that the mobility in the saturation regime is almost constant in the thickness range studied. In contrast, the subthreshold slope and the threshold voltage are highly impacted by the semiconductor thickness, and in particular they showed a common optimum thickness value. On both sides of this optimum we observe a loss in performances, which are tentatively attributed to different mechanisms.
ACCESSION #
37580350

 

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