Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

Takashina, K.; Nishiguchi, K.; Ono, Y.; Fujiwara, A.; Fujisawa, T.; Hirayama, Y.; Muraki, K.
April 2009
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p142104
Academic Journal
We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.


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