TITLE

Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

AUTHOR(S)
Takashina, K.; Nishiguchi, K.; Ono, Y.; Fujiwara, A.; Fujisawa, T.; Hirayama, Y.; Muraki, K.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p142104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.
ACCESSION #
37580345

 

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