Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications

Lin, Chih-Ming; Shih, Wen-chieh; Chang, Ingram Yin-ku; Juan, Pi-Chun; Lee, Joseph Ya-min
April 2009
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p142905
Academic Journal
Metal-ferroelectric-insulator-semiconductor capacitors and field effect transistors with Al/BiFeO3/Y2O3/Si structure were fabricated and characterized for nonvolatile memory applications. The capacitance-voltage curves exhibit a maximum clockwise memory window of 0.92 V. The minimum leakage current density is 2×10-7 A/cm2 at an applied voltage of 5 V. The capacitance-voltage memory window as a function of the sweep voltage range was investigated. The IDS-VGS curves of metal-ferroelectric-insulator-semiconductor transistors show a maximum memory window of 0.84 V. The drain current on/off ratio maintained more than three orders of magnitude after an elapsed time of 104 s.


Related Articles

  • Phosphorus coimplantation effects on optimum annealing temperature in Si-implanted GaAs. Sugitani, Suehiro; Hyuga, Fumiaki; Yamasaki, Kimiyoshi // Journal of Applied Physics;1/1/1990, Vol. 67 Issue 1, p552 

    Focuses on a study which concluded that phosphorous coimplantation raises the optimum annealing temperature, providing maximum sheet carrier concentration in silicon-implanted GaAs active layers. Indication of photoluminescence measurement; Importance of GaAs metal-semiconductor field-effect...

  • Study of ferroelectric-thin-film thickness effects on metal-ferroelectric-SiO[sub 2]–Si transistors. Lin, Yih-Yin; Singh, Jasprit // Journal of Applied Physics;6/1/2002, Vol. 91 Issue 11, p9297 

    This article examines the thickness effects of ferroelectric films on gate tunneling suppression and charge control in metal-ferroelectric-insulator-semiconductor field-effect transistors (MFISFETs). The formalism used is based on a blocking-layer model for the ferroelectric film and a...

  • Molecular beam deposited thin films of pentacene for organic field effect transistor applications. Dimitrakopoulos, C. D.; Brown, A. R.; Pomp, A. // Journal of Applied Physics;8/15/1996, Vol. 80 Issue 4, p2501 

    Focuses on a study which examined the transport properties of molecular beam deposited pentacene films using metal-insulator semiconductor field-effect transistor devices. Review of related literature; Description of the experimental setup; Findings.

  • Reversible charge injection in antiferroelectric thin films. Jiang, A. Q.; Tang, T. A.; Corkovic, S.; Zhang, Q. // Applied Physics Letters;11/24/2008, Vol. 93 Issue 21, p212908 

    High-energy storage antiferroelectric capacitors operated in a high speed require the quick release of stored charges after the removal of the electrical field accompanying ferroelectric-to-antiferroelectric phase transition. However, the phase-transition time can vary from a few nanoseconds to...

  • Low-temperature formation (<500 °C) of poly-Ge thin-film transistor with NiGe Schottky source/drain. Sadoh, T.; Kamizuru, H.; Kenjo, A.; Miyao, M. // Applied Physics Letters;11/6/2006, Vol. 89 Issue 19, p192114 

    Poly-Ge thin-film transistors (TFTs) with Schottky source/drain (S/D) contacts were fabricated on glass by low-temperature (<500 °C) processing. First, the annealing characteristics of Ni/crystal-Ge stacked structures were examined. The results indicated that NiGe/n-Ge Schottky contacts...

  • Origin of the drain current bistability in polymer ferroelectric field-effect transistors. Naber, R. C. G.; Massolt, J.; Spijkman, M.; Asadi, K.; Blom, P. W. M.; de Leeuw, D. M. // Applied Physics Letters;3/12/2007, Vol. 90 Issue 11, p1 

    The authors present measurements that elucidate the mechanism behind the observed drain current bistability in ferroelectric field-effect transistors based on the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) as the gate dielectric. Capacitance-voltage measurements on...

  • Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4 H-SiC. Potapov, A. S.; Ivanov, P. A.; Samsonova, T. P. // Semiconductors;May2009, Vol. 43 Issue 5, p612 

    Effect of annealing on the electrical properties of 50 nickel Schottky contacts formed on a single 4 H-SiC wafer has been studied. It is shown that annealing at 200°C for 1 h favors homogenization of the metal-semiconductor heterointerface, which leads to a narrower scatter of such contact...

  • Structure and electrical properties of TiN/GaAs Schottky contacts. Ding, J.; Liliental-Weber, Z.; Weber, E. R.; Washburn, J.; Fourkas, R. M.; Cheung, N. W. // Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2160 

    The interface structure and morphology of TiN/GaAs contacts before and after annealing at 500, 700, and 850 °C have been investigated by transmission electron microscopy. Results reveal that pocket-like protrusions are formed beneath the interface after annealing at 500 °C. These pockets...

  • Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor deposition. Kong, H. S.; Palmour, J. W.; Glass, J. T.; Davis, R. F. // Applied Physics Letters;8/10/1987, Vol. 51 Issue 6, p442 

    Metal-semiconductor field-effect transistors (MESFET’s) have been fabricated in an unintentionally doped, n-type β-SiC thin film grown by chemical vapor deposition (CVD). This n-type layer was deposited on a monocrystalline p-type β-SiC (100) CVD layer previously grown on a p-type...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics