TITLE

Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications

AUTHOR(S)
Lin, Chih-Ming; Shih, Wen-chieh; Chang, Ingram Yin-ku; Juan, Pi-Chun; Lee, Joseph Ya-min
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p142905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Metal-ferroelectric-insulator-semiconductor capacitors and field effect transistors with Al/BiFeO3/Y2O3/Si structure were fabricated and characterized for nonvolatile memory applications. The capacitance-voltage curves exhibit a maximum clockwise memory window of 0.92 V. The minimum leakage current density is 2×10-7 A/cm2 at an applied voltage of 5 V. The capacitance-voltage memory window as a function of the sweep voltage range was investigated. The IDS-VGS curves of metal-ferroelectric-insulator-semiconductor transistors show a maximum memory window of 0.84 V. The drain current on/off ratio maintained more than three orders of magnitude after an elapsed time of 104 s.
ACCESSION #
37580330

 

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