TITLE

SiGe nanorings by ultrahigh vacuum chemical vapor deposition

AUTHOR(S)
Lee, C.-H.; Shen, Y.-Y.; Liu, C. W.; Lee, S. W.; Lin, B.-H.; Hsu, C.-H.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p141909
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Formation of SiGe nanorings from Si capped Si0.1Ge0.9 quantum dots (QDs) grown at 500 °C by ultrahigh vacuum chemical vapor deposition was investigated. SiGe nanorings have average diameter, width, and depth of 185, 30, and 9 nm, respectively. Based on both Raman and x-ray diffraction results, the formation of SiGe nanorings can be attributed to Ge outdiffusion from central SiGe QDs during in situ annealing. Moreover, the depth of SiGe nanorings can be controlled by Si cap thickness. The Si cap is essential for nanorings formation.
ACCESSION #
37580320

 

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