TITLE

On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

AUTHOR(S)
Cherkashin, N.; Hÿtch, M. J.; Houdellier, F.; Hüe, F.; Paillard, V; Claverie, A.; Gouyé, A.; Kermarrec, O.; Rouchon, D.; Burdin, M.; Holliger, P.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p141910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Measurements of strain and composition are reported in tensile strained 10- and 30-nm-thick Si:C layers grown by chemical vapor deposition on a Si (001) substrate. Total carbon concentration varies from 0.62% to 1.97%. Strain measurements were realized by high-resolution x-ray diffraction, convergent-beam electron diffraction, and geometric phase analysis of high-resolution transmission electron microscopy cross-sectional images. Raman spectroscopy was used for the deduction of the substitutional concentration. We demonstrate that in addition to the growth conditions, strain accumulating during deposition, thus depending on a layer thickness, has an influence on the final substitutional carbon composition within a strained Si:C layer.
ACCESSION #
37580319

 

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