DyScO3 buffer layer for a performing metal-ferroelectric-insulator-semiconductor structure with multiferroic BiFeO3 thin film

Murari, N. M.; Thomas, R.; Pavunny, S. P.; Calzada, J. R.; Katiyar, R. S.
April 2009
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p142907
Academic Journal
Metal-ferroelectric-insulator-semiconductor structures with a BiFeO3 ferroelectric layer and DyScO3 insulating buffer layer were fabricated and characterized. BiFeO3 film was polycrystalline with rhombohedral structure and DyScO3 film was amorphous. The size of the capacitance-voltage memory window (ΔVFB) was investigated as a function of voltage sweep and frequency; ΔVFB increased to a saturation value of 1.7 V with the sweep voltage and it almost remained constant over a frequency range of 1 kHz to 1 MHz.


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