Superconductivity in heavily compensated Mg-doped InN

Tiras, E.; Gunes, M.; Balkan, N.; Airey, R.; Schaff, W. J.
April 2009
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p142108
Academic Journal
We report superconductivity in Mg-doped InN grown by molecular beam epitaxy. Superconductivity phase transition temperature occurs Tc=3.97 K as determined by magnetoresistance and Hall resistance measurements. The two-dimensional (2D) carrier density of the measured sample is n2D=9×1014 cm-2 corresponding to a three-dimensional (3D) electron density of n3D=1.8×1019 cm-3 which is within the range of values between Mott transition and the superconductivity to metal transition. We propose a plausible mechanism to explain the existence of the superconductivity in terms of a uniform distribution of superconducting InN nanoparticles or nanosized indium dots forming microscopic Josephson junctions in the heavily compensated insulating bulk InN matrix.


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