Possible formation of interlayer nano-p-n junctions and quantum dot in double-walled carbon nanotube with electrode contacts to different layers

Shimizu, T.; Haruyama, J.; Nozawa, K.; Sugai, T.; Shinohara, H.
April 2009
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p143104
Academic Journal
We report findings on the asymmetrical current properties on both the source-drain and back-gate voltage (VBG) dependence (unconventional ambipolar behavior) found in a double-walled carbon nanotube (DWNT) field-effect transistor, which has electrode contacts to different layers. We also find Coulomb oscillations with a large charging energy observable only in +VBG region at low temperature. As origins for these phenomena, we discuss the possible presence of outer p- and inner n-type semiconducting layers, a corresponding interlayer nano-p-n junction, and a small quantum dot region in the inner n-layer exposed from the outer layer. Annealing of the DWNT in air atmosphere after synthesis allows change in only outer layer to p-type, remaining n-type behavior in the inner layer.


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