Characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator

Ngo, C. Y.; Yoon, S. F.; Loke, W. K.; Cao, Q.; Lim, D. R.; Wong, Vincent; Sim, Y. K.; Chua, S. J.
April 2009
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p143108
Academic Journal
We report the characteristics of 1.3 μm electroabsorption modulators (EAMs) utilizing the InAs/InGaAs/GaAs quantum dot (QD) structures. While extinction ratio of ∼10 dB was obtained, suppression of absorption at low reverse bias was observed. Theoretical analysis using a strained-modified, single-band, constant-potential three-dimensional model shows that this is due to the presence of In0.15Ga0.85As acting as potential barrier for the heavy hole. From the device point-of-view, this suggests that InAs/InGaAs/GaAs QD-EAMs are potentially feasible for higher optical power handling capability, which is crucial for high link gain in analog fiber links. We believe that the findings are beneficial to those working on QD-EAMs.


Related Articles

  • Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors. Dey, Anup; Maiti, Biswajit; Chanda (Sarkar), Debasree // Journal of Applied Physics;2014, Vol. 115 Issue 14, p143107-1 

    A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (→k ) dependence of the optical transition matrix element. The band...

  • Phase-amplitude coupling characteristics in directly modulated quantum dot lasers. Wang, C.; Osiński, M.; Even, J.; Grillot, F. // Applied Physics Letters;12/1/2014, Vol. 105 Issue 22, p1 

    We present a semi-analytical model for studying the phase-amplitude coupling (α-factor) in quantum dot (QD) semiconductor lasers, which takes into account the influence of carrier populations in the excited state and in the two-dimensional carrier reservoir on the refractive index change....

  • The role of p-type doping and the density of states on the modulation response of quantum dot lasers. Shchekin, O. B.; Deppe, D. G. // Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2758 

    The modulation response of quantum dot (QD) lasers is analyzed using a quasi-equilibrium approach. The model suggests that present QD lasers are limited due to hole levels that are closely spaced in energy, as well as inhomogeneous broadening. Significant improvements are predicted through...

  • Many-body effects on modulation-doped InAs/GaAs quantum dots. Joo In Lee; Hyung Gyoo Lee // Applied Physics Letters;5/26/1997, Vol. 70 Issue 21, p2885 

    Examines the factors affecting the carrier lifetime in modulation-doped quantum dots. Exhibition of band filling and band-gap renormalization in quantum dot photoluminescence spectra; Role of band filling and screening in the nonlinear optical properties of semiconductors; Energy differences...

  • Estimation of electronic confinement in a quantum dot from envelope modulation of Coulomb.... Sakamato, T.; Hwang, S.W. // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p875 

    Examines the envelope modulation of Coulomb blockade oscillations in the conductance of a semiconductor quantum dot. Factors affecting quantum dot conductance; Relationship between the number of peaks per period and the gate voltage; Magnitude of electronic confinement strength.

  • Tunnel injection In[sub 0.4]Ga[sub 0.6]As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature. Bhattacharya, P.; Ghosh, S. // Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3482 

    By utilizing tunnel injection of electrons, first demonstrated in quantum well lasers, we have measured enhanced small-signal modulation bandwidth, f[sub -3dB], and reduced temperature sensitivity of the threshold current, characterized by T[sub 0], in In[sub 0.4]Ga[sub 0.6]As/GaAs...

  • Small-signal modulation response of InP/GaInP quantum-dot lasers. Riedl, T.; Hangleiter, A.; Porsche, J.; Scholz, F. // Applied Physics Letters;5/27/2002, Vol. 80 Issue 21, p4015 

    We report on investigations concerning the modulation dynamics of InP/GaInP quantum-dot (QD) lasers grown by metalorganic vapor-phase epitaxy. Room-temperature operation of our lasers occurs at threshold current densities (j[sub thr]) around 1.8 kA/cm² and emission wavelengths (λ) between...

  • Effect of dimensional and magnetic quantization hybridization in the optical absorption spectra of nanoheterosystems withD(-)-states. Krevchik, V.; Grunin, A.; Semenov, M.; Marko, A. // Russian Physics Journal;Oct2004, Vol. 47 Issue 10, p1037 

    The magnetoabsorption of light by quantum dot - D(-)-center complexes synthesized in a transparent dielectric matrix - is theoretically studied with allowance for dispersed quantum dot (QD) sizes. In the effective mass approximation, an analytical expression for the impurity magnetoabsorption...

  • Light absorption involving longitudinal optical phonons in semiconductor quantum dots. Baimuratov, A.; Baranov, A.; Fedorov, A. // Optics & Spectroscopy;Jul2011, Vol. 111 Issue 1, p51 

    theory of single-photon interband transitions involving optical phonons in semiconductor quantum dots (QDs) has been developed. This theory assumes that the electron subsystem of QDs with infinite potential walls is in strong confinement, and its energy spectrum can be described according to the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics