TITLE

Characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator

AUTHOR(S)
Ngo, C. Y.; Yoon, S. F.; Loke, W. K.; Cao, Q.; Lim, D. R.; Wong, Vincent; Sim, Y. K.; Chua, S. J.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p143108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the characteristics of 1.3 μm electroabsorption modulators (EAMs) utilizing the InAs/InGaAs/GaAs quantum dot (QD) structures. While extinction ratio of ∼10 dB was obtained, suppression of absorption at low reverse bias was observed. Theoretical analysis using a strained-modified, single-band, constant-potential three-dimensional model shows that this is due to the presence of In0.15Ga0.85As acting as potential barrier for the heavy hole. From the device point-of-view, this suggests that InAs/InGaAs/GaAs QD-EAMs are potentially feasible for higher optical power handling capability, which is crucial for high link gain in analog fiber links. We believe that the findings are beneficial to those working on QD-EAMs.
ACCESSION #
37580295

 

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