Single-crystal-like organic heterojunction with 40 nm thick charge accumulation layers

Zhu, Feng; Yang, Jianbing; Song, De; Li, Chunhong; Yan, Donghang
April 2009
Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p143305
Academic Journal
Single-crystal-like organic heterojunction films of copper phthalocyanine (CuPc) and copper-hexadecafluoro-phthalocyanine (F16CuPc) were fabricated by weak-epitaxy-growth method. The intrinsic properties of organic heterojunction were revealed through threshold voltage shift of field-effect transistors and measurement of single-crystal-like diodes. At both sides of the heterojunction interface 40 nm thick charge accumulation layers formed, which showed that the long carriers’ diffusion length is due to the high crystallinity and low density of deep bulk traps of single-crystal-like films. This also indicated the electronic properties of organic heterojunction can be adjusted by controlling the growth condition.


Related Articles

  • Ambipolar copper phthalocyanine heterojunction field effect transistors based organic inverter. Yadav, Sarita; Ghosh, Subhasis // AIP Conference Proceedings;Feb2013, Vol. 1512 Issue 1, p466 

    Stable ambipolar characteristic have been observed in F16CuPc/CuPc heterojunction based organic field effect transistor. These heterojunction devices show significant ambipolar charge transport with similar electron and hole mobilities. An electron mobility of 4.29×10-4 cm2V-1s-1 and hole...

  • The dynamic characteristics of Ai gate CuPc Thin film transistor. Zeying Wang; Dongxing Wang; Yongshuang Zhang; Yueyue Wang; Jinghua Yin; Hong Zhao // Advanced Materials Research;2014, Vol. 981, p830 

    We have fabricated Au/CuPc/Al/CuPc/Au organic thin film transistor (OTFTs) using vacuum deposition with CuPc thin films of stable chemical property and semi conductive Al gate thin film electrode. The static and dynamic characteristics were tested at room temperature. The test results show that...

  • Improve the n-type performance in organic heterojunction transistors by controlling thickness of copper phthalocyanine. Jianlin Zhou; Xiaoqing Shen; Zhen Wang; Shengdong Hu; Wei Huang; Xinge Yu; Ping Gan // European Physical Journal - Applied Physics;May2015, Vol. 70 Issue 2, p20102-p1 

    N-type C60 thin film transistors with heterojunction were fabricated by introducing copper phthalocyanine (CuPc) modifying layer between polymer dielectrics and C60 semiconductor. Comparing with conventional organic thin film transistors (OTFTs) based on single C60 layer, such devices can not...

  • Charge transport of copper phthalocyanine single-crystal field-effect transistors stable above 100 °C. Yamada, Koichi; Takeya, J.; Shigeto, K.; Tsukagoshi, K.; Aoyagi, Y.; Iwasa, Y. // Applied Physics Letters;3/20/2006, Vol. 88 Issue 12, p122110 

    Intrinsic charge transport of copper phthalocyanine single-crystal field-effect transistors is measured as function of temperature up to above 100 °C. The conduction of the accumulated carriers shows hopping-type transport, so that the field-effect mobility increases with temperature...

  • Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements. Smets, Quentin; Verhulst, Anne S.; El Kazzi, Salim; Verreck, Devin; Richard, Olivier; Bender, Hugo; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Heyns, Marc M. // Applied Physics Letters;2015, Vol. 107 Issue 7, p072101-1 

    The effective bandgap is a crucial design parameter of heterojunction tunneling field-effect transistors. In this letter, we demonstrate a method to measure the effective bandgap directly from the band-to-band tunneling current of a heterojunction Esaki diode, of which we only require knowledge...

  • High-speed integrated heterojunction field-effect transistor photodetector: A gated photodetector. Taylor, G. W.; Simmons, J. G. // Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1754 

    A new concept for a high-speed photodetector is described which promises very low noise with avalanche gain. The detector is constructed as an integrated circuit element in the heterojunction field-effect transistor technology and utilizes a unique n-n heterojunction interface formed by either...

  • Heterojunction field-effect transistors based on AlGaSb/InAs. Luo, L. F.; Beresford, R.; Wang, W. I.; Munekata, H. // Applied Physics Letters;8/21/1989, Vol. 55 Issue 8, p789 

    We have fabricated the first InAs-channel field-effect transistor, which shows a transconductance of 180 mS/mm at 1 V drain-source bias (77 K). An improved buffer layer could significantly improve the device performance. In addition, we propose a new broken-gap heterojunction field-effect...

  • Field-effect tuning of carrier density in Nd1.2Ba1.8Cu3Oy thin films. Cassinese, A.; De Luca, G.M.; Prigiobbo, A.; Salluzzo, M.; Vaglio, R. // Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3933 

    Using a field effect device we modified the number of holes in the surface layers of 4 to 10 unit cell Nd1.2Ba1.8Cu3Oy (NBCO) epitaxial films grown on (100) SrTiO3 substrates. The results obtained on a set of 12 devices demonstrate that it is possible to induce reversible changes of the hole...

  • Temperature Variation Effects on I-V Characteristics of Cu-Phthalocyanine based OFET. Zafar, Q.; Akram, R.; Karimov, Kh.S.; Khan, T. A.; Farooq, M.; Tahir, M. M. // World Academy of Science, Engineering & Technology;2011, Issue 58, p517 

    In this study we present the effect of elevated temperatures from 300K to 400K on the electrical properties of copper Phthalocyanine (CuPc) based organic field effect transistors (OFET). Thin films of organic semiconductor CuPc (40nm) and semitransparent Al (20nm) were deposited in sequence, by...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics