Noise mediated regularity of porous silicon nanostructures

Escorcia-Garcia, J.; Agarwal, V.; Parmananda, P.
March 2009
Applied Physics Letters;3/30/2009, Vol. 94 Issue 13, p133103
Academic Journal
Interaction of noise with nonlinear electrochemical kinetics involving the etching of porous silicon is studied experimentally. It is realized that by monotonically increasing the level of internal noise, one can tune the regularity of the spatial distribution of pores in silicon nanostructures. This regularity of the noise provoked structures is quantified using a spatial normalized variance technique in conjunction with the calculation of Hurst exponents. Our experimental results indicate the emergence of intrinsic coherence resonance. Consequently, there exists an optimal value of internal noise for which the spatial distribution of nanopores attain maximal regularity. This regularity of the pores can be useful for enhancing the optical response of porous silicon based devices.


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