TITLE

High temperature cavity polaritons in epitaxial Er2O3 on silicon

AUTHOR(S)
Michael, C. P.; Sabnis, V. A.; Yuen, H. B.; Jamora, A.; Semans, S.; Atanackovic, P. B.; Painter, O.
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/30/2009, Vol. 94 Issue 13, p131103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Cavity polaritons around two Er3+ optical transitions are observed in microdisk resonators fabricated from epitaxial Er2O3 on Si(111). Using a pump-probe method, spectral anticrossings and linewidth averaging of the polariton modes are measured in the cavity transmission and luminescence at temperatures above 361 K.
ACCESSION #
37321922

 

Related Articles

  • Optical properties of AlN and GaN in elevated temperatures. Nam, K.B.; Li, J.; Lin, J.Y.; Jiang, H.X. // Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3489 

    Deep ultraviolet photoluminescence spectroscopy has been employed to study the optical transitions in AlN and GaN epilayers at temperatures from 10 to 800 K, from which the parameters that describe the temperature variation of the energy band gap (α and β or aB and θ) and linewidth...

  • Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon. Macdonald, Daniel; Deenapanray, Prakash K.; Diez, Stephan // Journal of Applied Physics;10/1/2004, Vol. 96 Issue 7, p3687 

    The impact of residual recombination centers after low-energy self-implantation of crystalline silicon wafers and annealing at 900 °C has been determined by bulk carrier lifetime measurements as a function of implant dose. Doses below 1013 cm-2 resulted in no measurable increase in...

  • Control of conduction type in Al- and N-codoped ZnO thin films. Yuan, G. D.; Ye, Z. Z.; Zhu, L. P.; Qian, Q.; Zhao, B. H.; Fan, R. X.; Perkins, Craig L.; Zhang, S. B. // Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p202106 

    p-type ZnO thin films have been fabricated by an Al- and N-codoping technique at the growth temperature between 380 and 480 °C, as identified by the Hall measurement. At lower and higher temperatures, however, the samples are n type. The best p-type sample shows a resistivity and hole...

  • The optical and electrical properties in Nd3+ doped lead tungstate single crystals. Yanlin Huang; Hyo Jin Seo; Zhu, Wenliang // Journal of Materials Science;Jul2007, Vol. 42 Issue 14, p5421 

    The influence of Nd3+ doping with different concentration on the luminescence properties of PbWO4 single crystals were investigated by means of the thermo-luminescence, X-ray excited luminescence and photoluminescence spectra. Nd3+ doping has almost the same doping effects as that of La3+ doping...

  • Deep-level transient spectroscopy and photoluminescence measurements of dissociation energy of the 1.014-eV copper center in copper-diffused silicon crystal. Nakamura, Minoru; Murakami, Susumu // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p073512 

    Dissociation of the 1.014-eV copper center by annealing in a silicon crystal diffused with dilute copper was measured by deep-level transient spectroscopy (DLTS) and photoluminescence (PL) methods. Clearly different dissociation energies were obtained from the dissociation lifetimes of the...

  • Photoluminescence of Si-doped GaAs epitaxial layers. Yaremenko, N.; Karachevtseva, M.; Strakhov, V.; Galiev, G.; Mokerov, V. // Semiconductors;Dec2008, Vol. 42 Issue 13, p1480 

    The effect of arsenic pressure on the amphoteric behavior of Si during the growth of the Si-doped (100)-, (111)Ga-, and (111)As-oriented GaAs layers is studied by photoluminescence spectroscopy. The edge luminescence band is examined, and the concentration and the degree of compensation as...

  • Erbium Photoluminescence Excitation Spectroscopy in Si : Er Epitaxial Structures. Andreev, B. A.; Krasil'nik, Z. F.; Yablonsky, A. N.; Kuznetsov, V. P.; Gregorkiewicz, T.; Klik, M. A. J. // Physics of the Solid State;Jan2005, Vol. 47 Issue 1, p86 

    Excitation spectra of erbium photoluminescence in Si : Er epitaxial structures are studied within a broad pump wavelength range (λex = 780–1500 nm). All the structures studied reveal a fairly strong erbium photoluminescence signal at photon energies substantially smaller than the...

  • Effects of interfacial layers in InGaN/GaN quantum-well structures on their optical and nanostructural properties. Yung-Chen Cheng; Cheng-Ming Wu; C. C. Yang; Gang Alan Li; Rosenauer, Andreas; Kung-Jen Ma; Shih-Chen Shi; L. C. Chen // Journal of Applied Physics;7/1/2005, Vol. 98 Issue 1, p014317 

    We compared the optical properties and material nanostructures between several InGaN/GaN multiple quantum-well (QW) samples of different interfacial layers. In some of the samples, InN interfacial layers were inserted between the wells and barriers to improve the QW quality and hence the...

  • Visible photoluminescence of co-sputtered Ge—Si duplex nanocrystals. Xu, Z. W.; Ngan, A. .W.; Hua, W. Y.; Meng, X. K. // Applied Physics A: Materials Science & Processing;Aug2005, Vol. 81 Issue 3, p459 

    The photoluminescence (PL) characteristics of co-sputtered Ge–Si duplex nanocrystal films were examined under excitation by a 325-nm HeCd laser, combined with Raman and Fourier-transform infrared reflection spectra analysis. A broad visible PL spectrum from the as-deposited Ge–Si...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics