TITLE

Electrically pumped quantum post vertical cavity surface emitting lasers

AUTHOR(S)
Kim, Hyochul; Rakher, Matthew T.; Bouwmeester, Dirk; Petroff, Pierre M.
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/30/2009, Vol. 94 Issue 13, p131104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate low threshold electrically pumped lasing in oxide apertured vertical cavity surface emitting lasers with quantum posts (QPs) as the active medium. A lasing threshold current as low as 12 μA is achieved at 7 K and room temperature continuous wave lasing is also demonstrated in the cavities with quality factors of ∼10 000. At low temperature, the QP devices show remarkably lower lasing current thresholds compared to equivalent quantum dot devices.
ACCESSION #
37321921

 

Related Articles

  • The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed. Vandervelde, Thomas E.; Kai Sun; Merz, James L.; Kubis, Alan; Hull, Robert; Pernell, Timothy L.; Bean, John C. // Journal of Applied Physics;6/15/2006, Vol. 99 Issue 12, p124301 

    It is well documented that quantum dots (QDs), grown and subsequently buried under silicon at temperatures greater than 400 °C, flatten into a pancakelike shape. Although QD arrays in Si superlattices have been studied for more than a decade, the process of flattening is not well understood....

  • Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers. Kirstaedter, N.; Schmidt, O. G.; Ledentsov, N. N.; Bimberg, D.; Ustinov, V. M.; Egorov, A. Yu.; Zhukov, A. E.; Maximov, M. V.; Kop’ev, P. S.; Alferov, Zh. I. // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1226 

    We present gain measurements and calculations for InAs/GaAs quantum dot injection lasers. Measurements of the modal gain and estimation of the confinement factor by transmission electron microscopy yield an exceptionally large material gain of 6.8(±1)×104 cm-1 at 80 A cm-2. Calculations...

  • Femtosecond dynamics and absorbance of self-organized InAs quantum dots emitting near 1.3 μm at room temperature. Birkedal, D.; Bloch, J.; Shah, J.; Pfeiffer, L.N.; Pfeiffer, L. N.; West, K. // Applied Physics Letters;10/2/2000, Vol. 77 Issue 14 

    High-sensitivity, femtosecond differential transmission measurements on self-organized InAs quantum dots at room temperature allow us to determine the dynamics of resonantly excited electron-hole pairs, as well as the absorbance (α[sub 0]d) of quantum dots. The room temperature differential...

  • Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth. Hopfer, F.; Mutig, A.; Kuntz, M.; Fiol, G.; Bimberg, D.; Ledentsov, N. N.; Shchukin, V. A.; Mikhrin, S. S.; Livshits, D. L.; Krestnikov, I. L.; Kovsh, A. R.; Zakharov, N. D.; Werner, P. // Applied Physics Letters;10/2/2006, Vol. 89 Issue 14, p141106 

    Single-mode vertical-cavity surface-emitting lasers based on dense arrays of stacked submonolayer grown InGaAs quantum dots, emitting near 980 nm, demonstrate a modulation bandwidth of 10.5 GHz. A low threshold current of 170 μA, high differential efficiency of 0.53 W/A, and high modulation...

  • Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging. Schulz, T.; Duff, A.; Remmele, T.; Korytov, M.; Markurt, T.; Albrecht, M.; Lymperakis, L.; Neugebauer, J.; Chèze, C.; Skierbiszewski, C. // Journal of Applied Physics;2014, Vol. 115 Issue 3, p1 

    Based on the evaluation of lattice parameter maps in aberration corrected high resolution transmission electron microscopy images, we propose a simple method that allows quantifying the composition and disorder of a semiconductor alloy at the unit cell scale with high accuracy. This is realized...

  • Structural properties and spatial ordering in multilayered ZnMgTe/ZnSe type-II quantum dot structures. Manna, U.; Noyan, I. C.; Zhang, Q.; Salakhutdinov, I. F.; Dunn, K. A.; Novak, S. W.; Moug, R.; Tamargo, M. C.; Neumark, G. F.; Kuskovsky, I. L. // Journal of Applied Physics;Feb2012, Vol. 111 Issue 3, p033516 

    We report the structural properties and spatial ordering of multilayer ZnMgTe quantum dots (QDs) embedded in ZnSe, where sub-monolayer quantities of Mg were introduced periodically during growth in order to reduce the valence band offset of ZnTe QDs. The periodicity, period dispersion,...

  • Tuning photoluminescence of reduced graphene oxide quantum dots from blue to purple. Fuchi Liu; Tao Tang; Qian Feng; Ming Li; Yuan Liu; Nujiang Tang; Wei Zhong; Youwei Du // Journal of Applied Physics;2014, Vol. 115 Issue 16, p164307-1 

    Reduced graphene oxide quantum dots (rGOQDs) were synthesized by annealing GOQDs in H2 atmosphere. The photoluminescence (PL) properties of GOQDs and the rGOQDs samples were investigated. The results showed that compared to GOQDs, a blue to purple tunable PL of rGOQDs can be obtained by...

  • Low Temperature Regulated Growth of PbS Quantum Dots by Wet Chemical Method. Kumar, Hitanshu; Bind, Umesh Chandra; Barman, P. B.; Singh, Ragini Raj // AIP Conference Proceedings;2015, Vol. 1675 Issue 1, p1 

    Narrow size distribution with regulated synthesis of lead sulfide (PbS) quantum dots (QDs) was achieved through wet chemical method. Different concentrations of 2-mercaptoethanol (capping agent) were used for tailoring the QDs size. Transmission electron microscopy and X-ray diffraction studies...

  • Microstructure of laterally oxidized AlxGa1-xAs layers in vertical-cavity lasers. Twesten, R. D.; Follstaedt, D. M.; Choquette, K. D.; Schneider, R. P. // Applied Physics Letters;7/1/1996, Vol. 69 Issue 1, p19 

    We have studied the lateral oxidation of AlxGa1-xAs (x=0.98 and 0.92) layers contained in vertical-cavity lasers using cross-sectional transmission electron microscopy. We find a fine-grained (∼4 nm) cubic spinel phase of Al2O3 in both the 2% Ga- and 8% Ga-oxidized layers. The 8%...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics