The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties

Soo-Kun Jeon; Jae-Gab Lee; Eun-Hyun Park; Jin Jang; Jae-Gu Lim; Seo-Kun Kim; Joong-Seo Park
March 2009
Applied Physics Letters;3/30/2009, Vol. 94 Issue 13, p131106
Academic Journal
The electrostatic discharge (ESD) properties of the InGaN-light emitting diode (LED) were investigated in terms of the internal capacitance of the InGaN-LED. The LEDs with higher internal capacitance were found to be more resistant to external ESD impulses. The internal capacitance of the InGaN-LED was controlled by the silicon doping level of the n-GaN layer bordering the active layer. The human body model ESD yield at -500 V was increased from 27% to 94% by increasing the internal capacitance. Moreover, the high ESD pass yield was maintained up to -7000 V.


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