TITLE

Origin of electric dipoles formed at high-k/SiO2 interface

AUTHOR(S)
Kita, Koji; Toriumi, Akira
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/30/2009, Vol. 94 Issue 13, p132902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A model for the physical origin of the dipole formed at high-k/SiO2 interface is proposed. In our model, an areal density difference of oxygen atoms at high-k/SiO2 interface is considered as an intrinsic origin of the dipole formation. The oxygen movement from higher-oxygen-density side to a lower-oxygen-density one will determine the direction of interface dipole. The bonding energy relaxation at the interface explains why the oxygen density difference is the driving force of the oxygen movement. Our model enables the prediction of the dipole directions for candidate gate dielectrics, including those so far not reported.
ACCESSION #
37321907

 

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