Surface passivation and interface reactions induced by hydrogen peroxide treatment of n-type ZnO (0001)

Schifano, R.; Monakhov, E. V.; Svensson, B. G.; Diplas, S.
March 2009
Applied Physics Letters;3/30/2009, Vol. 94 Issue 13, p132101
Academic Journal
X-ray photoemission spectroscopy and electrical measurements have been employed to study O-face [formula] n-type ZnO samples treated by hydrogen peroxide (H2O2). A highly resistive and oxygen-rich surface layer is revealed, presumably caused by a high concentration of zinc vacancies and/or adsorbed O2 molecules. As a result, the surface exhibits upward energy band bending (∼0.4 eV) promoting the formation of high barrier Schottky contacts and suppressing the surface leakage current. Furthermore, after Pd deposition an enhanced formation of PdO is found at the Pd/ZnO interface for the H2O2-treated samples, and this is also expected to increase the resulting Schottky barrier height (∼0.6 eV), which yields up to seven orders of magnitude in current rectification between forward and reverse bias voltage.


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