TITLE

Circularly polarized lasing in a (110)-oriented quantum well vertical-cavity surface-emitting laser under optical spin injection

AUTHOR(S)
Fujino, Hiroshi; Koh, Shinji; Iba, Satoshi; Fujimoto, Toshiyasu; Kawaguchi, Hitoshi
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/30/2009, Vol. 94 Issue 13, p131108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We fabricated and characterized a vertical-cavity surface-emitting laser (VCSEL) based on (110) InGaAs/GaAs multiple quantum wells (MQWs). Circularly polarized lasing in the (110) VCSEL by optical injection of spin-polarized electrons has been demonstrated at 77 K and room temperature. A high degree of circular polarization, 0.94, was observed at 77 K, reflecting the long electron spin relaxation time in the (110) MQWs.
ACCESSION #
37321899

 

Related Articles

  • Interwell exciton relaxation in semimagnetic asymmetric double quantum wells. Zaitsev, S. V.; Brichkin, A. S.; Dorozhkin, P. S.; Bacher, G. // JETP Letters;11/15/2006, Vol. 84 Issue 6, p340 

    The possibility of magnetic field control of the spectral and polarization characteristics of exciton recombination is examined in Cd(Mg, Mn) Te-based asymmetric double quantum wells. At low fields, the exciton transition in a semimagnetic well is higher in energy than that in a nonmagnetic well...

  • Electron spin relaxation time in GaAs/AlGaAs multiple quantum wells grown on slightly misoriented GaAs(110) substrates. Shinji Koh; Nakanishi, Akira; Kawaguchi, Hitoshi // Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p081111 

    We measured the electron spin relaxation times Ï„s in GaAs/AlGaAs multiple quantum wells (MQWs) grown on slightly misoriented GaAs(110) substrates. The Ï„s of the MQW on misoriented GaAs(110) decreased when the misorientation angles were increased. The bulk inversion asymmetry component of...

  • Polarization-dependent gain-current relationship in (111)-oriented GaAs/AlGaAs quantum-well lasers. Hayakawa, T.; Suyama, T.; Takahashi, K.; Kondo, M.; Yamaoto, S.; Hijikata, T. // Journal of Applied Physics;7/1/1988, Vol. 64 Issue 1, p297 

    Presents a study that investigated theoretically and experimentally the gain characteristics in quantum-well lasers. Use of Hakki and Paoli's method in measuring the polarization gain-current characteristics of (111)- and (100)-oriented gallium arsenide/aluminum gallium arsenic...

  • Room-temperature electron spin dynamics in GaAs/AlGaAs quantum wells. Tackeuchi, Atsushi; Nishikawa, Yuji // Applied Physics Letters;2/5/1996, Vol. 68 Issue 6, p797 

    Investigates the spin relaxation process of electrons at room temperature in nominally undoped gallium arsenide/aluminum gallium arsenide quantum wells. Use of time-resolved polarization absorption measurement; Dependence of the spin relaxation time on the electron confined energy; Mechanism...

  • Ultrafast optical sampling pump-probe measurement of exciton spin relaxation in GaAs/AlGaAs.... Adachi, Satoru; Takeyama, Shojiro // Applied Physics Letters;2/12/1996, Vol. 68 Issue 7, p964 

    Examines the spin dynamics of gallium arsenide/AlGaAs multiple quantum wells at room temperature in subpicosecond to nanosecond time region. Use of optical sampling nondegenerate pump-probe technique; Spin relaxation time revealed by polarization dependent absorption signals; Washout of spin...

  • Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers. Chen, J.-R.; Ling, S.-C.; Huang, H.-M.; Su, P.-Y.; Ko, T.-S.; Lu, T.-C.; Kuo, H.-C.; Kuo, Y.-K.; Wang, S.-C. // Applied Physics B: Lasers & Optics;Apr2009, Vol. 95 Issue 1, p145 

    The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the...

  • The Polarization-dependence of the Gain in Quantum Well Lasers. Boxberg, Fredrik; Tereshonkov, Roman; Tulkki, Jukka // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1563 

    The governing role of the conduction band - heavy-hole band (C-HH ) coupling on the polarization of gain in quantum well lasers has been predicted in the phenomenological model of Asada et al. In their model, based on bulk band structure arguments, the C-HH coupling makes the transition dipole...

  • Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures. Della Sala, Fabio; Di Carlo, Aldo; Lugli, Paolo; Bernardini, Fabio; Fiorentini, Vincenzo; Scholz, Reinhard; Jancu, Jean-Marc // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p2002 

    Investigates the free-carrier screening of macroscopic polarization fields in wurtzite gallium nitride (GaN)/indium gallium nitride (InGaN) quantum well lasers. Use of self-consistent tight-binding approach; High carrier concentrations found experimentally in nitride lasers.

  • Optical gain characteristics of staggered InGaN quantum wells lasers. Zhao, Hongping; Tansu, Nelson // Journal of Applied Physics;Jun2010, Vol. 107 Issue 11, p113110 

    Staggered InGaN quantum wells (QWs) are analyzed as improved gain media for laser diodes (LDs) lasing at 440 and 500 nm. The calculation of band structure is based on a 6-band k·p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics