TITLE

Direct-gap exciton and optical absorption in the Ge/SiGe quantum well system

AUTHOR(S)
Kuo, Yu-Hsuan; Li, Yin-Shun
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p121101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The ground-level direct-gap excitons and quantum-confined Stark effect (QCSE) electroabsorption in the Ge/SiGe quantum well structures are studied using the tunneling resonance modeling and the variational method. The exciton radius, transition energy, binding energy, and optical oscillator strength are calculated for various quantum well thicknesses (5–35 nm) and vertical electric fields (0–105 V/cm) simultaneously. The relative direct-gap-to-indirect-gap absorption ratios are compared. A quantum well implementation scheme with relatively broad thickness range of ∼5–15 nm can provide moderate excitonic absorption and contrast ratio for long wavelength operation. This investigation will improve the QCSE electroabsorption efficiency in the Ge quantum well system.
ACCESSION #
37259609

 

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