TITLE

Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization

AUTHOR(S)
Lee, Jang-Sik; Kim, Min-Sun; Kim, Dongjo; Kim, Yong-Mu; Moon, Jooho; Joo, Seung-Ki
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p122105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-performance polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated by using ink-jet printed nickel on large area glass substrates. Direct-printed Ni dots were used as a catalyst to crystallize the amorphous silicon into poly-Si for use in the channel region of TFT devices by metal-induced lateral crystallization. The fabricated poly-Si TFTs showed high field-effect mobility and on-off ratio that are comparable to the TFTs prepared using conventional semiconductor processes. The method presented here is a combination of bottom-up and top-down approaches and has a potential to be used in next generation high-performance poly-Si TFT fabrication.
ACCESSION #
37259602

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics