Acoustoelectric luminescence from a field-effect n-i-p lateral junction

De Simoni, Giorgio; Piazza, Vincenzo; Sorba, Lucia; Biasiol, Giorgio; Beltram, Fabio
March 2009
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p121103
Academic Journal
A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric transport and SAW-driven electroluminescence. The acoustoelectric current can be controlled down to complete pinch-off by means of the lateral gates.


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