Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C band

Hostein, R.; Braive, R.; Larqué, M.; Lee, K.-H.; Talneau, A.; Le Gratiet, L.; Robert-Philip, I.; Sagnes, I.; Beveratos, A.
March 2009
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p123101
Academic Journal
We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at room temperature. The quality factor of the cavity mode is 44×103 with an ultralow modal volume of the order of 1.2(λ/n)3, inducing an enhancement in the spontaneous emission rate of up a factor of 2.8 at 300 K.


Related Articles

  • Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs quantum dots. Wang, X.-D.; Liu, N.; Shih, C. K.; Govindaraju, S.; Holmes Jr., A. L. // Applied Physics Letters;8/23/2004, Vol. 85 Issue 8, p1356 

    We report evidence for the existence of anticorrelation in InGaAs/GaAs self-assembled quantum dots (QDs). We found that, as a function of the spacer layer thickness, the QDs between the neighboring layers are either vertically correlated (at small spacer thickness) or anticorrelated (at larger...

  • Whispering gallery resonances in semiconductor micropillars. Astratov, V. N.; Yang, S.; Lam, S.; Jones, B. D.; Sanvitto, D.; Whittaker, D. M.; Fox, A. M.; Skolnick, M. S.; Tahraoui, A.; Fry, P. W.; Hopkinson, M. // Applied Physics Letters;8/13/2007, Vol. 91 Issue 7, p071115 

    In this letter, the authors observe high quality (Q up to 20 000) whispering gallery modes (WGMs) with small modal volumes V∼0.3 μm3 in 4–5 μm Al(Ga)As/GaAs micropillars by employing an experimental geometry in which both excitation and collection of emission are in a direction...

  • The role of dot height in determining exciton lifetimes in shallow InAs/GaAs quantum dots. Campbell-Ricketts, T. E. J.; Kleemans, N. A. J. M.; Nötzel, R.; Silov, A. Yu.; Koenraad, P. M. // Applied Physics Letters;1/18/2010, Vol. 96 Issue 3, p033102 

    The spectral dependence of the photoluminescence recombination lifetime has been measured for individual self-assembled InGaAs/GaAs quantum dots, over the entire emission envelope. The measurements show a rising trend with increasing emission wavelength, increasing from 680 ps at 900 nm to about...

  • Spatial ordering of quantum dots in microdisks. Xie, Z. G.; Solomon, G. S. // Applied Physics Letters;8/29/2005, Vol. 87 Issue 9, p093106 

    We demonstrate the spatial localization of optically active InAs quantum dots in the narrow whispering gallery mode region of a GaAs microdisk cavity. This is achieved through preferential In adatom surface diffusion on a partial cavity structure in a way that can be generalized to other optical...

  • Localized formation of InAs quantum dots on shallow-patterned GaAs(100). Wang, Zh. M.; Lee, J. H.; Liang, B. L.; Black, W. T.; Kunets, Vas. P.; Mazur, Yu. I.; Salamo, G. J. // Applied Physics Letters;6/5/2006, Vol. 88 Issue 23, p233102 

    Selective formation of InAs quantum dots on the sidewalls of mesa strips along both [01-1] and [011] directions of a GaAs(100) surface is demonstrated. This result is in sharp contrast to observations on traditionally deep-patterned substrates, where quantum dots are formed on top mesas and at...

  • Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots. Pavarelli, N.; Ochalski, T. J.; Liu, H. Y.; Gradkowski, K.; Schmidt, M.; Williams, D. P.; Mowbray, D. J.; Huyet, G. // Applied Physics Letters;12/3/2012, Vol. 101 Issue 23, p231109 

    The optical properties of InAs/GaAs quantum dots capped with a GaAsSb quantum well are investigated by means of power-dependent and time-resolved photoluminescence. The structure exhibits the coexistence of a type-I ground state and few type-II excited states, the latter characterized by a...

  • Optical Properties Of IR Quantum Dot Detectors With Miniband Tunnel Extraction. Schrey, F. F.; Nguyen, D. P.; Regnault, N.; Ferreira, R.; Bastard, G.; Strasser, G.; Unterrainer, K. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p1423 

    We report on optical properties of InAs QD based mid- and far-infrared quantum dot infrared photodetectors (QDIP) in different host matrix environments. We show how a vertical periodic arrangement of the dots and the insertion of the QDs into an AlAs/GaAs quantum well superlattice (QW-SL) not...

  • Independent tuning of quantum dots in a photonic crystal cavity. Kim, Hyochul; Thon, Susanna M.; Petroff, Pierre M.; Bouwmeester, Dirk // Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p243107 

    One of the main obstacles to coupling two quantum dots (QDs) to a single nanocavity mode in a cavity quantum electrodynamics system is the ability to independently tune the QD frequencies. We demonstrate that in a GaAs photonic crystal membrane structure with two embedded QD layers, the QD...

  • Solution-processed polymer-free photovoltaic devices consisting of PbSe colloidal quantum dots and tetrabenzoporphyrins. Kikuchi, Einosuke; Kitada, Seiki; Ohno, Akira; Aramaki, Shinji; Maenosono, Shinya // Applied Physics Letters;4/28/2008, Vol. 92 Issue 17, p173307 

    Polymer-free photovoltaic devices were fabricated via a solution process using PbSe colloidal quantum dots and an organic semiconductor, tetrabenzoporphyrin, that can be derived from a soluble precursor. Flat heterojunction (FHJ) and bulk heterojunction (BHJ) devices were fabricated and the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics