TITLE

Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions

AUTHOR(S)
Bayram, C.; Péré-laperne, N.; McClintock, R.; Fain, B.; Razeghi, M.
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p121902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A pulsed metal-organic chemical vapor deposition technique is developed for the growth of high-quality AlN/GaN superlattices (SLs) with intersubband (ISB) transitions at optical communications wavelengths. Tunability of the AlN and GaN layers is demonstrated. Indium is shown to improve SL surface and structural quality. Capping thickness is shown to be crucial for ISB transition characteristics. Effects of barrier- and well-doping on the ISB absorption are reported.
ACCESSION #
37259592

 

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