Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy

Newman, Scott A.; Kamber, Derrick S.; Baker, Troy J.; Wu, Yuan; Wu, Feng; Chen, Zhen; Namakura, Shuji; Speck, James S.; DenBaars, Steven P.
March 2009
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p121906
Academic Journal
Coalesced, crack-free (0001) AlN films were grown on stripe patterned sapphire substrates without AlN seed layers using hydride vapor phase epitaxy. Using templates with stripes oriented in the [formula] direction, lateral epitaxial overgrowth AlN films were coalesced over trench regions as wide as 10 μm despite parasitic sidewall and trench growth. Using transmission electron microscopy, a reduction in the dislocation density from 1.6×109 cm-2 in the seed region to less than 1.0×108 cm-2 in the wing region was demonstrated. Atomic force microscopy and cathodoluminescence measurements were also performed to assess the material quality.


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