Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes

Kong, Xiangzi; Liu, Caixia; Dong, Wei; Zhang, Xindong; Tao, Chen; Shen, Liang; Zhou, Jingran; Fei, Yongfeng; Ruan, Shengping
March 2009
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p123502
Academic Journal
In this letter, metal-semiconductor-metal (MSM) TiO2 ultraviolet (UV) detectors with Ni electrodes have been fabricated. TiO2 thin films were prepared by sol-gel method. At 5 V bias, the dark current of the detector with Ni electrode was 1.83 nA. High photoresponse of 889.6 A/W was found under irradiation of 260 nm UV light, which was much higher than those of other wide bandgap UV detectors with MSM structure. The high photoresponse was due to the great internal gain caused by the hole trapping at interface. The rise time of the device was 13.34 ms and the fall time was 11.43 s.


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