High-performance, fully transparent, and flexible zinc-doped indium oxide nanowire transistors

Zhang, W. F.; He, Z. B.; Yuan, G. D.; Jie, J. S.; Luo, L. B.; Zhang, X. J.; Chen, Z. H.; Lee, C. S.; Zhang, W. J.; Lee, S. T.
March 2009
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p123103
Academic Journal
We report the fabrication of fully transparent and flexible nanowire transistors by combining a high-quality In2O3:Zn nanowire channel, a SiNx high-κ dielectric, and conducting Sn-doped In2O3 electrodes on a polyethylene terephthalate substrate. The devices show excellent operating characteristics with high carrier mobilities up to 631 cm2 V-1 s-1, a drain-source current on/off modulation ratio ∼1×106, a high on-state current ∼1×10-5 A, a small subthreshold gate voltage swing of 120 mV decade-1, and a near zero threshold voltage. The devices further show high reproducibility and stable performance under bending condition. The high-performance nanowire transistors would enable application opportunities in flexible and transparent electronics.


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