High-speed switching of spin polarization for proposed spin-photon memory

Zayets, V.; Ando, K.
March 2009
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p121104
Academic Journal
Nonvolatile high-speed optical memory is proposed, which utilizes the magnetization reversal of nanomagnet by spin-polarized photoexcited electrons. It was demonstrated experimentally that one selected pulse from the train of two optical data pulses with interval of 450 fs can solely excite the spin-polarized electrons without a disturbance from the unselected optical data pulse. That proves feasibility for operation of the memory with speed of 2.2 Tbits/s.


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