Epitaxial ZnO films on (111) Si substrates with Sc2O3 buffer layers

Guo, W.; Katz, M. B.; Nelson, C. T.; Heeg, T.; Schlom, D. G.; Liu, B.; Che, Y.; Pan, X. Q.
March 2009
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p122107
Academic Journal
Epitaxial (0001) ZnO films were grown on (111) Si substrates using epitaxial (111) Sc2O3 buffer layers. The quality of the ZnO epilayers is manifested by a Hall mobility of 77 cm2/V s at room temperature, x-ray diffraction rocking curve full widths at half maximum of 300–400 arc sec, and optical properties comparable to ZnO single crystals. Transmission electron microscopy studies reveal that a thin layer of SiOx was formed at the Sc2O3/Si interface not during the Sc2O3 growth, but during the growth of the ZnO films. The thermal-mismatch induced residual strain in the films causes an energy shift of the exciton resonances in the photoluminescence spectrum. The redshifts are smaller than those of GaN films, indicating that the optical properties of ZnO are less strain sensitive.


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